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Classes Taught

• EGRE 303 - Electronic Devices

Editor

• G. Pensl, H. Morkoç, B. Monemar and E. Janzén, “Proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials,” ICSC III-N, '97, Stockholm, Sweden, Aug. 31, 1997. Materials Science Forum Vols. 264-268, Trans Tech Publication Ltd. ISSN 0255-5476
• F. Leonberger, H.C. Lee, F. Cappasso and H. Morkoç, Eds., Proc. of 1987 OSA Picosecond Electronics and Optoelectronics Meeting, Springer Verlag. Springer-Series in Electronics and Photonics, 24, Berlin Heidelberg, 1987.
• R.L. Gunshor and H. Morkoç, Eds., “Growth of Compound Semiconductors,” Proc. of SPIE, Bay Point, FL. Meeting, 1987.

Education

• B.S., Electrical Engineering, Istanbul Technical University, 1968
• M.S., Electrical Engineering, Istanbul Technical University, 1969
• Ph.D., Electrical Engineering, Cornell University, 1975

Publications/Books

• H. Morkoç, “Nitrides Semiconductors and Devices”, Springer Verlag in press.
• H. Morkoç, H. Ünlü and G. Ji, “Fundamentals and Technology of MODFETs,” Volume II, Wiley and Sons, 1991.
• H. Morkoç, H. Ünlü and G. Ji, “Fundamentals and Technology of MODFETs,” Volume I, Wiley and Sons, 1991.

Research Topics

• Group III-V Semiconductors.
• Light Emitting Diodes
• Nitride Semiconductor Heterostructures

Special Issues and Book Chapters

• G. Popovici and H. Morkoç, “Growth and Doping of, and Defects in III-Nitrides” Ed. S. J. Pearton, Gordon and Breach Publishers, Amsterdam 1997. in press.
• Hadis Morkoç, “Beyond SiC! III-V Nitride Based Heterostructures and Devices” in “SiC Materials and Devices,” Ed. Y. S. Park, Academic Press, Willardson and Beer Series. Vol. 52, pp. 307-394, (1998).
• Hadis Morkoç, F. Hamdani, and Arnel Salvador, “Electronic and Optical Properties of III-V Nitride-based Quantum Wells and superlattices” in “Gallium Nitride,” Academic Press, Eds. J. Pankove and T. Moustakas, in the Semiconductors and Semimetals Series Vol. 50, pp. 193-254, (1997), Series Eds. R. K. Willardson and E. R. Weber.
• B. H. Bairamov, T. Gant, M. Delaney, Yu E. Kitaev, M. V. Klein, D. Levi, H. Morkoç, and R. A. Evarestov, “Theoretical and Experimental Study of Raman Scattering in Short Period (GaAs)m(AlAs)n Superlattices,” in "The Best of Russian Physics,” M. Levinstein and M. Shur eds., ISBN 981-02-1579-7, (1995), pp. 202-207.
• Samuel Strite and Hadis Morkoç, “MBE Growth of GaAs/Ge Heterostructures,” in Handbook of Thin Film Process Technology, D. A. Glocker and S. I. Shah, Eds., (Institute of Physics, Philadelphia 1995) pp. X2.1:1-5..
• S. Strite, M.E. Lin and H. Morkoç, “Recent Progress in the MBE Growth of III-V Nitride Semiconductors,” in The Encyclopedia of Advanced Materials, Eds. D. Bloor, M. C. Fleming, R. J. Brook, S. Mahajan, Senior Ed. R. W. Cahn, pp. 1629-1636, Pergamon Press, (1994).
• M.E. Lin, S. Strite and H. Morkoç, “The Physical Properties of AlN, GaN and InN,” in The Encyclopedia of Advanced Materials, Eds. D. Bloor, M. C. Fleming, R. J. Brook, S. Mahajan, Senior Ed. R. W. Cahn, pp. 79-86, Pergamon Press, (1994).
• H. Morkoç, “Foreword” for “Properties of Group III-Nitrides” Ed. by James H. Edgar, Institute of Physics, INSPEC Series. 1995.
• A. Salvador and H. Morkoç, “Molecular Beam Epitaxial Growth and Impurity Levels of GaAs based Quantum Wells and Superlattices” Ed. P. K. Bhattacharya, Institute of Physics, INSPEC Series.
• K. Suzue, S. N. Mohammad, and H, Morkoç, “GaAs Based Modulation Doped Heterostructures, in “Properties of III-V Superlattices and Quantum Wells,” Ed. P. K. Bhattacharya, Institute of Physics, INSPEC Series.
• S. N. Mohammad and Hadis Morkoç, “MODFETs: Operation, Status and Applications”, in “Compound Semiconductor Electronics: The Age of Maturity,” Ed. M. S. Shur, World Scientific Publishing Company. ISBN 981-02-2325, 1996, pp. 25-84
• G. B. Gao, S. N. Mohammad, G. M. Martin, and H. Morkoç, “III-V Compound Semiconductor Heterojunction Bipolar Transistors”, in “International Journal of High Speed Electronics and Systems”, in “Compound Semiconductor Electronics: The Age of Maturity" Ed. M. S. Shur, World Scientific Publishing Company. ISBN 981-02-2325, 1996, pp. 85-174
• A. Botchkarev, A. Salvador, B. Sverdlov, and H. Morkoç, “Recipe for GaN growth procedure by MBE” in Handbook of Thin Film Process Technology, Eds. D. Glocker and S. I. Shah, Institute of Physics Publishing, in press. ONR and AFOSR.
• Samuel Strite and Hadis Morkoç, “Recipe for the MBE Growth of GaAs/Ge Heterostructures,” in Handbook of Thin Film Process Technology, Eds. D. Glocker and S. I. Shah, Institute of Physics Publishing, in press. ONR and AFOSR.
• H. Morkoç, “III-V Nitrides and Silicon Carbide for Photonic Materials and Devices,” in “CRC Handbook of Photonics,” pp. 49-84,, Boca Rotan, NY, 1997,M.S. Gupta, ed.
• S. T. Strite and H. Morkoç, “Energetic Particle Assisted MBE,” in S. Ismat Shah and D.A. Glocker, eds., Handbook of Thin Film Process Technology, IOP Publishing, Inc., in press.
• H. Morkoç, Ed., “Properties and Preparation of Emerging Device Heterostructures ” Thin Solid Films, September 1993.
• S. Fang and H. Morkoç, “Lattice Mismatched Heteroepitaxy,” in “Integrated Optoelectronics”, Eds. M. Degenais, R.F. Leheney and J. Crow, Academic Press, San Diego, CA, pp. 145-209, 1995.
• H. Morkoç, “Strained Layer FETs, Lasers and Phototransistors in the InGaAs/GaAs/AlGaAs Heterostructure System,” in Proceedings of 1990 Seoul Int'l Symposium on the Physics of Semiconductors and Applications, Seoul, Korea, August 20-21, pp 65 - 112, 1990.
• H. Morkoç, “Strained Layers and Lasers in InGaAs/GaAs/AlGaAs Heterostructure System,” Presented at the NATO Advanced Research Workshop on Condensed Systems of Low Dimensionality, Marmaris, Turkey, April 23-27, 1990. in Condensed Systems of Low Dimensionality pp. 579-612
• R. Houdré and H. Morkoç, “Properties of MBE Grown GaAs on Si,” Critical Rev. Sol. State & Mat. Sci., Vol. 16(2), pp. 91-114, 1990. AFOSR.
• H. Ünlü and H. Morkoç, “Growth and Properties of GaAs-Based Devices on Si,” in “GaAs Technology, Vol. II,” Ed. D.K. Ferry, Howard Sams and Co., Indianapolis, 1988. AFOSR.
• H. Morkoç and H. Ünlü, “A Critical Discussion of Factors Affecting the Performance of MODFETs, Microwave and Digital Applications,” in “Device and Circuit Applications of III-V Semiconductor Superlattices and Modulation Doping,” Ed., R. Dingle, Semiconductors and Semimetals, Academic Press, 1987.
• H. Morkoç and M. Abe, Editors, “Heterojunction Field Effect Transistors,” IEEE Trans. Electron. Dev., Vol. ED-33(5), pp. 541-792, 1986.
• H. Morkoç, “Modulation Doped Alx Ga1-x As/GaAs Heterostructors,” in “The Technology and Physics of Molecular Beam Epitaxy,” Ed. E.H.C. Parker, Plenum, NY pp. 185-231, 1985.
• H. Morkoç, Editor, J. Vac. Sci. Technol. B, Vol. 1, pp. 119-205, 1983.
• H. Morkoç, “Modulation Doped Alx Ga1-x As/GaAs Field Effect Transistors (MODFETs),” in “Analysis, Fabrication and Performance, MBE and Heterostructures,” Eds. L.L. Chang and K. Ploog, Martinus Nijhoff Publishers, The Netherlands, Series E, Vol. 87, Ch. 7, pp. 625-676, 1985. (Based on a lecture given at NATO Advanced Series E, Study Institute on MBE and Heterostructures, March 7-19, 1983).

Tutorial, Review and Popular Articles

• H. Morkoç, Roberto Cingolani, Walter Lambrecht, Bernard Gil, H.-X Jiang and J. Lin, and D. Pavlidis “Spontaneous polarization and piezoelectric field in Nitride Semiconductor Heterostructures,” Proc. of the 9th International Symposium on the Physics of Semiconductors and Applications, Nov. 6-7, 1998. Seoul Korea. Journal of the Korean Physical Society.
• H. Morkoç, “Wurtzite GaN Based Heterostructures by Molecular Beam Epitaxy,” IEEE J. Photonics and Quantum Electronics, Ed. Richard Miles and I. Akasaki, IEEE Selected Topics in Quantum Electronics, Vol. 4, No. 3. pp. 537-549, 1998.
• H. Morkoç, “Modulation Doped Field Effect Transistors,” in Wiley Encyclopedia of Electrical Engineering and Electronics Engineering, Ed. J. Webster, John Wiley and Sons, Inc. Publishers, in press.
• H. Morkoç and S. N. Mohammad, “Light Emitting Diodes” in Wiley Encyclopedia of Electrical Engineering and Electronics Engineering, Ed. J. Webster, John Wiley and Sons, Inc. Publishers.
• H. Morkoç, “The Global Wireless Web” IEEE Circuits and Devices Magazine, Vol. 13, pp. 32-40, March 1997
• Hadis Morkoç, “Dopant incorporation and Defects in, and Applications of III-V Nitrides and Related Semiconductors,” Proc. of the 8th International Symposium on the Physics of Semiconductors and Applications, Oct. 21-22, 1996. Seoul Korea. Journal of the Korean Physical Society, S26-S51, 1997. INVITED
• S. N. N. Mohammad and H. Morkoç, “Progress and Prospects of Group III-V Nitride Semiconductors,” Progress in Quantum Electronics. Vol. 20, Numbers 5 and 6, pp. 361-525, (1996), a monograph.
• S. N. Mohammad, A. Salvador, and H. Morkoç, “Emerging GaN Based Devices,” Proc. IEEE, Vol. 83, pp. 1306-1355, October 1995. INVITED
• G. B. Gao, S. N. Mohammad, G. M. Martin, and H. Morkoç, “III-V Compound Semiconductor Heterojunction Bipolar Transistors,” in International Journal of High Speed Electronics and Systems, Vol. 6, No. 1, March 1995, Ed. M. S. Shur, World Scientific Publishing Company.
• H. Morkoç and S. N. Mohammad, “High Luminosity Gallium Nitride Blue and Blue-Green Light Emitting Diodes,” Science Magazine, Vol. 267, pp. 51-55, Jan. 6, 1995. INVITED.
• H. Morkoç, S. Strite, G. B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, “A Review of Large Bandgap SiC, III-V Nitrides, and ZnSe Based II-VI Semiconductor Structures and Devices,” J. Appl. Phys. Reviews, Vol. 76, No. 3. pp. 1363- 1398 August (1994).
• G. L. Zhou and H. Morkoç, “Si/SiGe Heterostructures and Devices,” Thin Solid Films, 231(1-2),pp. 125-142, August 25, 1993. Special Issue: “Properties and Preparation of Emerging Device Heterostructures” Ed. H. Morkoç.
• S. Strite, M.E. Lin and H. Morkoç, “Progress and Prospects for GaN and the III-V Nitride Semiconductors,” Thin Solid Films, 231(1-2), pp. 197-210, August 25, 1993. In Special Issue: “Properties and Preparation of Emerging Device Heterostructures” Ed. H. Morkoç.
• D. S. L. Mui, Z. Wang and H. Morkoç, “A Review of III-V Semiconductor Based Metal-Insulator-Semiconductor Structures and Devices,” Thin Solid Films, 231(1-2), pp. 197-210, August 25, 1993. In Special Issue: “Properties and Preparation of Emerging Device Heterostructures” Ed. H. Morkoç.
• H. Morkoç, “Properties and Preparation of Emerging Device Heterostructures – Preface,” Thin Solid Films, Vol. 25, No. 1-2, Pr. 7R7, August 25, 1993.
• H. Morkoç, “Strained Layer Heterosstructures and Their Applications to MODFETS, HBTs, and Lasers”, Proc. of IEEE, Vol. 81, No. 12, PG 493, pp. 1786-1786, (December 1993).
• H. Morkoç, B. Sverdlov and G.B. Gao, “Strained Layer Heterostructures and Their Applications to MODFETs, HBTs and Lasers,” Proceeding of IEEE, Vol. 81, No. 4, pp. 492-556, April, 1993.
• M.S. Ünlü and H. Morkoç, “Wavelength Selective Optical Logic,” Optics and Photonics News, p. 30, December, 1992.
• G.B. Gao, H. Morkoç and M.F. Chang “Heterojunction Bipolar Transistor Design for Power Applications,” IEEE Transactions on Electron Devices, Vol. ED-39, pp. 1987-1997, 1992.
• S.T. Strite and H. Morkoç, “GaN, AlN, and InN: A Review”, Journal of Vacuum Science and Technology, Vol. B10, pp. 1237-1266.(1992)
• T.C. Shen, G.B. Gao and H. Morkoç, “Recent Developments in Ohmic Contacts to III-V Compound Semiconductors ” Journal of Vacuum Science and Technology, Vol. B10, pp. 2113-2132, 1992.
• D. Biswas and H. Morkoç, “A Safety System for Gas Source Molecular Beam Epitaxy,” III/Vs Review, Vol. 4(6), pp. 20-24, 1991.
• H. Morkoç, “MODFETs Reach New Heights with Cut-Off Frequencies over 400 GHz,” IEEE Circ. and Dev. Magazine, Vol. 7, pp.14-20, November, 1991.
• K. Adomi, J.I. Chyi, S.F. Fang, T.C. Shen, S. Strite and H. Morkoç, “MBE Growth of GaAs and Other Compound Semiconductors with Applications to Devices,” Thin Solid Films, Vol. 205(2), pp. 182-212, 1991.
• S. Fang, K. Adomi, S. Iyer, H. Morkoç, H. Zabel, C. Choi and N. Otsuka, “Gallium Arsenide on Silicon: Epitaxial Growth and Characterization,” J. Appl. Phys. Rev., Vol. 68, pp. R31-R58, 1990.
• S. Iyer, H. Morkoç, N. Otsuka and H. Zabel, “Molecular Beam Epitaxy of Gallium Arsenide on Silicon,” Comments on Condensed Matter Physics, Vol. 15(1), pp. 1-50, 1989.
• H.Z. Chen, J. Paslaski, H. Morkoç and A. Yariv, “High Speed GaAs Lasers and Detectors on Silicon for Optical Interconnects,” Optic News, Vol. 14, pp. 24-25, 1988.
• H. Morkoç, H. Ünlü, H. Zabel and N. Otsuka, “GaAs on Si: A Review,” Solid State Technology, Vol. 31, pp. 71-76, March, 1988.
• H. Ünlü and H. Morkoç, “Strained Layer InGaAs/GaAs Quantum Wells and Their Applications to Ultra-High Frequency MODFETs,” Solid State Technology, Vol. 31, pp. 83-87, March, 1988.
• H.Z. Chen, J. Paslaski, A. Yariv and H. Morkoç, “GaAs/AlGaAs Lasers on Si Substrates and Their High Frequency Characteristics,” Industrial Research and Development, pp. 61, January, 1988.
• H.Z. Chen, A. Ghaffari, H. Wang, H. Morkoç and A. Yariv, “Continuous Wave Operation of GaAs Lasers on Si Substrates,” Optic News, Vol. 13, pp. 13, December, 1987.
• G. Munns and H. Morkoç, “GaAs on Si: Progress and Opportunities,” Physics Today, Vol. 40. p. S66, Physics News in 1986, January, 1987, (invited).
• H. Morkoç, “Developments in the GaAs on Si Technology,” American Institute of Physics, News Release, 1986.
• T.J. Drummond, W.T. Masselink and H. Morkoç, “Modulation Doped GaAs(Al,Ga)As Heterojunction Field Effect Transistors: MODFETs,” Proc. of IEEE, Vol. 74(6), pp. 773-822, June, 1986. Translated into Russian as well.
• R. Fischer and H. Morkoç, “New High Speed (Al,Ga)As Modulation Doped Field Effect Transistors,” IEEE Circuits and Devices Magazine, Vol. 1, pp. 35-38, 1985.
• H. Morkoç and P.M. Solomon, “MODFET - Superschennelle Transistoren,” Technische Runschau, Vol. TR10(77), Jahrgang, pp. 74-79, March, 1985. (invited)
• H. Morkoç and P.M. Solomon, “The HEMT: A Superfast Transistor,” IEEE Spectrum, Vol. 21(2), pp. 28-35, February, 1984. (invited