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Classes Taught

• EGRE 310 Microwave and Photonics Engineering
• EGRE 303 Electronic Devices

Education

• Ph.D., Physics, Duke University, 2003
• M.A., Physics, Duke University, 1999
• B.S., Physics, Bogazici University, Turkey, 1996
• B.S., Electrical Engineering, Bogazici University, Turkey, 1996

Publications/Books, Book Chapters

• R. Shimada, Ü. Özgür, and H. Morkoç, “Polariton devices based on wide-bandgap semiconductor microcavities”, in “Photonics at nanoscale, Springer Series: Lecture Notes in Nanoscale Science and Technology” edited by A. Neogi and Z. M. Wang, Springer, 2008.
• J. Xie, Y. Fu, Ü. Özgür, and H. Morkoç, “GaN lateral epitaxial growth using porous SiNx, TiNx and SiC”, in “Porous SiC and GaN: Unitary, Catalysis, and Biotechnology Applications” edited by R. M. Feenstra and C. E. C. Wood, Wiley, 2008.
• Ü. Özgür and H. Morkoç, “Optical Properties of ZnO and related alloys”, in “Zinc Oxide Bulk, Thin Films and Nanostructures” edited by C. Jagadish and S. J. Pearton, Elsevier, 2006.
• H. Morkoç and Ü. Özgür, “Zinc Oxide: materials preparation, properties, and devices”, WILEY, 2008.

Research Topics

• Nanophotonics
• Near-field Optical Microscopy
• Magnetic Semiconductors and Magneto-optical Spectroscopy
• Nonlinear Optics
• Light Emitting Diodes
• Ultrafast Spectroscopy
• Group III-Nitride and Zinc Oxide Optoelectronics

Selected Publications

• Ü. Özgür, C. -W. Lee, and H. O. Everitt, "Control of Coherent Phonons in InGaN Multiple Quantum Wells", Phys. Rev. Lett. 86, 5604 (2001).
• Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, "Systematic measurement of AlGaN Refractive Indices", Appl. Phys. Lett. 79, 4103 (2001).
• Ü. Özgür and H. O. Everitt, "Ultrafast Carrier Relaxation in GaN, InGaN, and an In0.07Ga0.93N/In0.12Ga0.88N Multiple Quantum Well", Phys. Rev. B 67, 155308 (2003).
• Ü. Özgür, H. O. Everitt, L. He, and H. Morkoç, "Stimulated Emission and Ultrafast Carrier Relaxation in AlGaN/GaN Multiple Quantum Wells", Appl. Phys. Lett. 82, 4080 (2003).
• A. Teke, Ü. Özgür, S. Doğan, X. Gu, H. Morkoç, B. Nemeth, J. Nause, and H. O. Everitt, “Excitonic fine structure and recombination dynamics in single crystalline ZnO”, Phys. Rev. B 70, 195207 (2004).
• Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, and H. O. Everitt, “Increased carrier lifetimes in GaN epitaxial films grown using SiNx and TiNx porous network layers”, J. Appl. Phys. 97, 103704 (2005).
• Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Doğan, V. Avrutin, S. –J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices”, J. Appl. Phys. 98, 041301 (2005).
• Ü. Özgür, X. Gu, S. Chevtchenko, J. Spradlin, S. –J. Cho, H. Morkoç, F. H. Pollak, B. Nemeth, and J. E. Nause, “Thermal Conductivity of bulk ZnO after different thermal treatments”, J. Electron. Mater. 35, 550 (2005).
• Ç. Kurdak, N. Biyikli, Ü. Özgür, H. Morkoç, and V. Litvinenko, “Weak antilocalization and zero-field electron spin splitting in AlxGa1-xN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas”, Phys. Rev. B 74, 113308 (2006).
• Ü. Özgür, X. F. Ni, Y. Fu, H. Morkoç, and H. O. Everitt, “Near field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN”, Appl. Phys. Lett. 89, 262117 (2006).
• X. F. Ni, Ü. Özgür, A. A. Baski, H. Morkoç, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of semi-polar GaN on m-plane sapphire by metalorganic chemical vapor deposition”, Appl. Phys. Lett. 90, 182109 (2007).
• J. Xie, Ü. Özgür, Y. Fu. X. Ni, H. Morkoç, C. K. Inoki, T. S. Kuan, J. V. Foreman, and H. O. Everitt, “Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nano-network”, Appl. Phys. Lett. 90, 041107 (2007).
• J. Leach, Ü. Özgür, and H. Morkoç, “Evolution of surface morphology of GaN thin films during photoelectrochemical etching”, J. Vac. Sci. Technol. B 25, 1832 (2007).
• J. Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, and H. Morkoç, “High electron mobility in nearly lattice-matched AlInN/AlN/GaN field effect transistor heterostructures”, Appl .Phys. Lett. 91, 132116 (2007).
• R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoç, “Cavity polaritons in ZnO-based hybrid microcavities”, Appl. Phys. Lett. 92, 011127 (2008).